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王芳; 刘花; 马涛; 马首道; 刘玉芳

doi:10.37188/CO.EN.2022-0028

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王芳 ^{1, 3,},
刘花 ^1,,,
马涛 ⁴,
马首道 ¹,
刘玉芳 ²

1.
河南师范大学电子电气工程学院, 河南新乡 453007
2.
河南省光电传感集成应用重点实验室, 河南新乡 453007
3.
河南省电磁波工程院士工作站, 河南新乡 453007
4.
河南省增材智能制造工程实验室, 河南新乡 453007

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- 收稿日期: 2022-12-13
- 录用日期: 2023-02-16
- 修回日期: 2023-01-30
- 网络出版日期: 2023-02-22

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doi: 10.37188/CO.EN.2022-0028

WANG Fang ^{1, 3
,},
LIU Hua ^{1
,,},
MA Tao ⁴,
MA Shou-dao ¹,
LIU Yu-fang ²

1.
College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang 453007, China
2.
Henan Key Laboratory of Optoelectronic Sensing Integrated Application, Xinxiang 453007, China
3.
Academician Workstation of Electromagnetic Wave Engineering of Henan Province, Xinxiang 453007, China
4.
Henan Engineering Laboratory of Additive Intelligent Manufacturing, Xinxiang 453007, China

Funds:Supported by National Natural Science Foundation of China (NSFC) (No. 62075057)

More Information

Author Bio:
WANG Fang (1972—), female, born in Xinxiang, Henan Province, Ph.D, professor, doctoral supervisor, graduated from Henan Normal University in 2013 and is mainly engaged in the research of optical fiber sensing and new microelectronic device design. E-mail: [email protected]

LIU Hua (1995—), female, born in Anyang, Henan Province, master’s student, and is mainly engaged in the design of photoelectric integrated devices. E-mail: [email protected]

Corresponding author: [email protected]

摘要

摘要:
为了提高偏振分束器的消光比，提出了一种由混合等离子体水平狭缝波导(HSW)和氮化硅混合垂直狭缝波导(VSW)组成的双槽超紧凑偏振分束器(PBS)。同时，包层材料为二氧化硅，既能防止混合等离子体氧化，又便于与其他器件集成。采用有限元方法仿真HSW和VSW的模态特性。HSW和VSW波导在特定的宽度下TE偏振模式是满足相位匹配的，而TM偏振模式相位不匹配。因此，HSW波导中的TE模式与VSW波导发生强耦合，而TM模式直接通过HSW波导。结果表明：在1.55 μm的TE模式下，PBS的消光比(ER)为35.1 dB，插入损耗(IL)为0.34 dB，在TM模式下，PBS的ER和IL分别为40.9 dB和2.65 dB。所设计的PBS有100 nm的工作带宽，具有高ER，低IL的特点，适用于光子集成电路(PICs)。
- 光子集成电路 /
- 偏振分束器 /
- 双槽波导
Abstract:
To improve the extinction ratio of a polarization beam splitter, we propose a dual-slot ultra-compact polarization splitter (PBS) consisting of a hybrid plasma Horizontal Slot Waveguide (HSW) and a silicon nitride hybrid Vertical Slot Waveguide (VSW). The coating material is silicon dioxide, which can prevent the oxidation of the mixed plasma and also facilitate integration with other devices. The mode characteristics of the HSW and VSW are simulated by using the Finite Element Method (FEM). At suitable HSW and VSW widths, the TE polarization modes in HSW and VSW are phase-matched, while the TM polarization modes are phase mismatched. Therefore, the TE mode in an HSW waveguide is strongly coupled with a VSW waveguide by adopting a dual-slot, while the TM mode directly passes through the HSW waveguide. The results show that PBS achieves an Extinction Ratio (ER) of 35.1 dB and an Insertion Loss (IL) of 0.34 dB for the TE mode at 1.55 μm. For the TM mode, PBS reached 40.9 dB for ER and 2.65 dB for IL. The proposed PBS is designed with 100 nm bandwidth, high ER, and low IL, which can be suitable for photonic integrated circuits (PICs).
- photonic integrated circuits /
- polarization beam splitter /
- slot waveguides.

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Figure 1. (a) 3D schematic diagram, (b) cross-section and (c) top-view of the proposed PBS device

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Figure 2. Influence of waveguide width on the effective refractive index. (a) The real part of the refractive index of TE mode and TM mode varying with width in the HSW and VSW; the field distribution of the TE mode in the (b) HSW and (c) VSW, and the field distribution of the TM mode in the (d) HSW and (e) VSW

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Figure 3. Effect of waveguide spacing G. The effect of G on (a) the effective refractive index and (b) the coupling length p. Electric field profile of supermodes at 90 nm of G, (c) TE₀, and (d) TE₁

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Figure 4. The influence of G on ER and IL at the cross and bar ports. Here, W ₂ = 302 nm, W ₃ = 550 nm, r ₁ =4 μm, λ=1.55 μm and G= 90 nm

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Figure 6. The influence of λ on ER and IL at the cross and bar ports. Here, W ₂=302 nm, W ₃=550 nm, r ₁=4 μm, λ=1.55 μm and G= 90 nm

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Figure 5. The influence of L₁ on ER and IL at the cross and bar ports. Here, W ₂=302 nm, W ₃=550 nm, r ₁=4 μm, λ=1.55 μm and G= 90 nm

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Figure 7. The light propagations in the designed PBS of the (a) TE-Ey, (b) TM-Ez

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Figure 8. TE polarization beam splitting and electric field distribution at the corresponding position for the TE mode

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Figure 9. TM polarization beam splitting and electric field distribution at the corresponding position for the TM mode

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Figure 10. The fabrication process of the designed polarization beam splitter

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Figure 11. Effects of different dimensional tolerances on ER and IL. (a) W ₁=302 nm, (b) H ₁=560 m and (c) H ₂=60 nm

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Figure 12. Effects of different dimensional tolerances on ER and IL. (a) H ₃=180 nm and (b) H ₄=460 m

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Table 1. Performance comparison of the polarization

Reference paper	λ (μm)	Length (μm)	ER (dB)	IL (dB)	Input mode	Bandwidth (nm)
[ 29 ]	1.55	26.27	17	<1	TM	100
[ 29 ]	1.55	26.27	27	<1	TM	100
[ 30 ]	1.55	11	27.1	0.41	TE	170
[ 31 ]	1.55	4	30	1	TE	100
[ 31 ]	1.55	4	27	0.18	TM	100
[ 32 ]	1.55	14	38.4	3.26	TE	100
[ 32 ]	1.55	14	20.9	0.14	TM	100
[ 33 ]	1.55	16	26.7	0.05	TE	140
[ 33 ]	1.55	16	21.3	0.05	TM	140
[ 34 ]	1.55	9.9	45.6	<0.3	TE	100
[ 34 ]	1.55	8.3	20	<0.1	TM	100
[ 35 ]	3.5	25	19.78	1.64	TE	400
[ 35 ]	3.5	25	7.78	2.64	TM	400
This work	1.55	5.2	40.9	2.65	TM	100
This work	1.55	5.2	35.1	0.34	TE	100

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