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365彩票官网彩票

邝海, 黄振, 熊志华, 刘丽

邝海, 黄振, 熊志华, 刘丽. 365彩票官网彩票[J]. 365赌球, 2023, 16(6): 1305-1317. doi: 10.37188/CO.2023-0091
引用本文: 邝海, 黄振, 熊志华, 刘丽. 365彩票官网彩票[J]. 365赌球, 2023, 16(6): 1305-1317. doi: 10.37188/CO.2023-0091
KUANG Hai, HUANG Zhen, XIONG Zhi-hua, LIU Li. 365彩票官网[J]. Chinese Optics, 2023, 16(6): 1305-1317. doi: 10.37188/CO.2023-0091
Citation: KUANG Hai, HUANG Zhen, XIONG Zhi-hua, LIU Li. 365彩票官网[J]. Chinese Optics, 2023, 16(6): 1305-1317. doi: 10.37188/CO.2023-0091

365彩票官网彩票

doi: 10.37188/CO.2023-0091
基金项目:江西省教育厅科学技术研究项目(No. GJJ2201338);国家自然科学基金(No. 12364013);江西科技师范大学博士科研启动基金项目(No.2019BSQD020);中央引导地方科技发展资金项目(No. 2022ZDD03088)
详细信息
    作者简介:

    邝 海(1983—),女,湖南临武人,博士,讲师, 2019年于南昌大学获得博士学位,现为江西科技师范大学江西省光电子与通信重点实验室讲师,主要从事半导体发光材料与器件等方面的研究。E-mail: [email protected]

    熊志华(1974—),男,江西南昌人,博士,教授,2008年于南昌大学获得博士学位,现为江西科技师范大学江西省光电子与通信重点实验室主任,主要从事半导体光电材料等方面的研究。E-mail: [email protected]

  • 中图分类号:TN312

365彩票官网

Funds:Supported by Science and Technology Research Project of Jiangxi Education Department (No. GJJ2201338); National Natural Science Foundation of China (No. 12364013); Doctoral Research Foundation of Jiangxi Science and Technology Normal University (No. 2019BSQD020); Government Guides Local Science and Technology Development Funds(No. 2022ZDD03088)
More Information
  • 摘要:

    氮化镓基Micro-LED具备高亮度、高响应频率、低功耗等优点,是未来显示技术和可见光通信系统的理想选择,但是目前外量子效率(EQE)低下这一问题严重影响其规模化量产及进一步应用。为了突破EQE低下这一瓶颈,通过分析Micro-LED外量子效率的影响因素,得知EQE下降的主要原因包括侧壁缺陷引起的载流子损耗及非辐射复合。总结了侧壁缺陷对载流子输运及复合的影响。综述了目前常用的侧壁处理技术及修复方法,指出现有侧壁处理方法较为笼统、针对性不足且载流子与侧壁缺陷的作用机理并不十分清楚。提出应深入系统地研究侧壁缺陷种类和分布、载流子与侧壁缺陷作用机制及侧壁处理过程中的缺陷修复模式。本文为提高外量子效率、加快Micro-LED商业化量产进程提供设计思路和理论依据。

  • 图 1 Micro-LED结构示意图(改编自文献[ 1 ])

    Figure 1. Schematic diagram of Micro-LEDs Structure (adapted from Ref.[ 1 ])

    图 2 用于模拟和进行效率分析的垂直结构InGaN/GaN 基蓝色发光二极管的示意图(改编自文献[ 35 ])

    Figure 2. Schematic diagram of the InGaN/GaN-based blue light-emitting-diode used for the simulation and the analysis of the efficiency (adapted from Ref.[ 35 ])

    图 3 ICP腐蚀后ITO层的横断面扫描电子显微镜(SEM)图像[ 62 ]

    Figure 3. Cross-sectional scanning electron microscopy (SEM) image of ITO layer after exposing to ICP etch [ 62 ]

    图 4 提取系数A(a)和C (b)随着LED尺寸的变化图[ 53 ]

    Figure 4. Extracted coefficients A (a) and C (b) plotted versus LED size[ 53 ]

    图 5 (a)完整的Micro-LED示意图;(b)侧壁带缺陷的Micro-LED示意图;(c)样品的I-V曲线;(d)样品的P电极附近的载流子浓度变化(改编自文献[ 42 ])

    Figure 5. Schematic diagrams for (a) LED without sidewall damages and (b) LED with sidewall damages; (c) the current-voltage characteristics in semi-log scale for LEDs; (d) changes in carrier concentration profiles near the P-region for LED (adapted from Ref. [ 42 ])

    图 6 (a)样品在1 A/cm2下的电致发光图像;(b)、(c)不同尺寸芯片的EQE随注入电流密度的变化(改编自文献[ 62 ])

    Figure 6. (a) Electroluminescence images of Micro-LEDs at 1 A/cm2; (b), (c) variation of EQE with injection current density for different chip sizes (adapted from Ref.[ 62 ])

    图 7 离子注入后Micro-LED表面变化示意图。 (a)表面化学结构发生变化;(b)原子排列、表面修复和空穴缺陷填充;(c) GaN中的钝化层[ 70 ]

    Figure 7. Schematic diagram of Micro-LED surface changes after ion implantation. (a) Changes in surface chemical structure; (b) atomic alignment, surface repair and cavity defect filling; (c) passivation layer in GaN[ 70 ]

    表  1 Micro-LED与OLED、LCD比较[ 4 , 9 ]

    Table  1. Performance comparison of Micro-LED, OLED and LCD [ 4 , 9 ]

    Micro-LED OLED LCD
    Mechanism Self-emissive Self-emissive Backlight
    Luminous efficacy High Medium Low
    Power consumption Low Medium High
    Lifetime Long Medium Long
    Response time ns μs ms
    Cost High Medium Low
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    WANG W, ZHAO T T, LIU Q, et al. Research and development status of Mini/Micro LED mass transfer technology[J]. Optics and Precision Engineering, 2023, 31(2): 183-199. (in Chinese) doi: 10.37188/OPE.20233102.0183
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  • 收稿日期: 2023-05-15
  • 修回日期: 2023-06-02
  • 网络出版日期: 2023-09-26

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